For example if the single crystal is doped with vanadyl sulphate and grown by slow evaporation method, and it is replaced one of the ion in the host lattice and occupied in that place, then whether this substituitional incorporation can change the optical properties of the single crystal? otherwise there is no difference in changing the optical properties by interstitial or substituitional incorporation of the impurity ion in the host? if changes hapends how?
Respected sir,
It depends on whether the impurity ion's dielectric effect on the host matrix (ignoring the magnetic component of em wave). It is well known that optical properties is governed by interaction of em waves with matter and metals, semiconductor and insulator, depends on its inherent properties, have different result. For instance metals are opaque mostly and it does not allow light whereas, insulators and semiconductor (some) are transparent.
In most cases, it do change the optical property, since the impurity ion change overall all crystal field. If suppose, the host matrix is opaque to em (as in case of most metals) and impurity ion also has the same effect, and such that it does not alters the net propagation factor of em waves, the impurity ion does not give significant changes and the optical property does not changes. In all other cases, it do change and taking the magnetic component of em waves, the problem become more complex.
For example, the impurities can give additional peaks of absorption in the windows of transparency for the magnetic garnets.
Dear colleague! One example: Undoped or slightly doped silicon is transparent in the near-infrared range but high-doped (P, B etc.) Si is not, as a metal caused by the free charge carrier absorption. Wkr, M. Herms.
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