Hello! Hope all is well with you. I am a freshman in the field of micro-nano optoelectronic device research. Recently, I was reading relevant literature about GaN-based lasers, and noticed that many literatures mentioned the concept of "unintentional doping" regarding factors affecting carrier transport. I tried to understand this concept through Google and other search engines. What I have learned so far is that compared to actively introducing impurities into intrinsic semiconductors, unintentional doping is doping caused by not actively introducing impurities. What are the factors that lead to the phenomenon of unintentional doping? Can unintentionally adulterated components be controlled artificially?
It is a very tricky question. How can you control something unintentionally if unintentional means beyond control?
Unintentional doping is mostly caused by contamination. For example, when intentionally doping a wafer, metal traces on the wafer surface or on the doping source can also "unintentionally" diffuse. To "control" this, more precisely, to prevent this, high-purity materials and good cleaning procedures are needed.
Another example of unintentional doping is when you want to dope a specific area of the wafer, masks can be used to prevent unwanted diffusion.
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