Relation to determine trap energy from J-V characteristics obtained at varying temperatures of solar cells and expound upon the optoelectronic parameters based on the trap energy.
There is no such direct equation available to determine the trap energy inside the active material of solar cells at varying temperature. However, there are some relations of efficiency of solar cells with temperatures and trapenergy as well. This relations are also highly dependent on the active material of solar cell and for this, the relation might change with different solar cells as the active material changes. For example, for amophous silicon solar cells, if the internal temperature is increased by 1degree C, then the optical absorption will be decreased and correseponding decrement in photonic conversion effficiency will be 0.004%. Although the gradient of this decremnt is not uniform, rather this decremnt rate will be significantly increased at higher temperatures. You can find these decrement rate in some existing experimental literatures as well for different active materials.
For trap energy, you can calculate it from the path length improvement factor. As the improvement in optical path length is same for two different temperature, but, due to change optical absorption coefficient for change in internal temperature of active material, there must be a change in trap energy absorbed by the active material. Once you calculate the overall performance for the change in internal temperature, you can calculate the corresponding change in trap energy inside active material from the direct relation of path length improvement factor.