I just want to know how these two technologies are compatible to each other when we fabricate the STT-MRAM memories. One bit cell of STT MRAM consist of one MTJ + one NMOS transistor.
In my case, i have fabricated spin field effect transistors using MOS technology. This is Si/SiO2/magnetic layer and over that contact pads made of Au. The MTJ can also be combined with this subject to suitability of the parameters like material, etc. So, a cell can consist of both MTJ and spin-FETs. I have used oxide layer so that the devices are not shorted. However, if you combine MTJ with that, you need to be sure about the layer thickness of the oxide or of the different layers that you may be depositing for the MTJ device. The MTJ can be fabricated at the same platform on which spin-FET has been prepared or by depositing separate thin layers of laternate insulating/magnetic layers.
Answered by Behtash Behin-Aein of GlobalFoundries through email.
Magnetic Tunnel Junctions are passive 2 terminal devices that are typically are inserted between the metal layers on top of transistors. These are the same metal layers that are used on Si chips to connect various devices and circuits.
More formally, MTJ's are inserted in the back end of the line (BEOL) whereas the transistors (MOS) are at the front end of the line (FEOL).
The way they are fabricated are by deposithing thin films and then etching the films to get MTJ dots.
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