As We have studied that the bang-gap(BG) of semiconductors can be measured using Absorption and Reflectance spectra. But these techniques give only the average value of BG(crude way of measurement).Eg- If We consider a sample of Si NPs, it gets oxidized in ambient environment and also We if have particle of different size in sample, if we measure the BG for these samples using transmission-absorption spectra, it won't give the actual BG value. The STM I think can give actual value but I did not find any paper.
Your comment and discussion will be valuable for me. So please feel free to write.
Using STM you can observe density-of-states, hence the BG. On this topic you can find plenty of papers.
Dear Md. Seraj Uddin,
The difference between Metals, Semiconductors and Insulators is defined as the density of states at the "Chemical potential" or the "Fermi energy" at 0 K.
If the density of states at the chemical potential at 0 K is 0 then the solid is a "semiconductor" or an "insulator". This indicates that the chemical potential is in the band gap of the solid.
Dear you can find plenty of research papers on this topic.
I hope I have answered your question.
With Best Wishes,
Samir G. Pandya
Dear Samir & Shahbaz, thank you very much for this valuable information. I have searched papers on BG measurement using STM but could not get it. Could you attach some links specially on semiconductor NP samples. Meanwhile I will also try to check on other sources like scopus.
Dear Md. Seraj Uddin.
STM is a typical technique for the suface science investigation. U can get the local density of states and topography of nanoparticles with different size. and u can calculate the size of band gap from dI/dV vs Bias curve (STS). The attached paper may be helpful for u.
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