Reshmi Thomas, an answer I can provide related to you question is that last year we published a detailed polarized Raman intensity analysis for Si that shows how the intensity is correlated with crystal orientation using Raman tensor analysis, that you might find useful in vie of your question:
Uma Ramabadran, and Bahram Roughani, “Intensity Analysis of Polarized Raman Spectra for off Axis Single Crystal Silicon”, Mat. Sci. and Eng. B, 230, pp 31–42 (April 2018). https://doi.org/10.1016/j.mseb.2017.12.040
Also a featured review about this paper entitle; “Shining light on the off-axis single crystalline Si properties” to appear at Advances in Engineering (https://advanceseng.com/).