I am working on CVD graphene transistor matrix without transferring graphene its still on nickel and i deposited top and back metal contacts like a moscap and I measure the CV. the graph is shown in attached fig.can anyone suggest to me how can i explain it. Actually I am studying the metal graphene interface sensitivity.
If your graphene film is still on Nickel, you have a giant short at the backside and your CV measurement is essentially going to be a flat curve because of field screening due to the metallic Ni sheet. You should transfer your film over to a dielectric substrate first, such as SiO2 on highly doped Si substrate. You will also need a top-gate insulator (such as ALD alumina) before adding the top gate metal. Once you have this sandwich structure of Metal-GateInsulator-Graphene-SiO2-DopedSilicon, you can make a MOSCAP measurement using the Si substrate as the back-contact. You will have to prepare a calibration structure without graphene: Metal-GateInsulator-SiO2-DopedSilicon to get a reference capacitance measurement.
dear Tanuj Trivedi thanks...i have another problem about the graphene/ni interface.i made the Van der pauw type sample and characterize it using Hall Effect measurements but i get the lowest mobility value of 80 cm2/(V·s). can u ask me the reason and the nickel interface effect on graphene properties and mobility. i am sharing a little bit result
Thickness(m) = 1.230000E-9
Dimensions(mm^2) = 10.0 X 10.0
Temperature (K) : 3.00E+2
I(A) = 1.000000E-2
B Field(G) = 5300.000
Rs(ohm/sq) = 1.951028E-1
Rho(ohm-cm) = 2.399764E-8
Con(1/ohm-cm) = 4.167076E+7
VH(V) = -7.879118E-6
RH(m^3/C) = -1.828550E-12
Sample Type = N
Ns(/cm^2) = -4.198457E+17
N(/cm^3) = -3.413379E+24
Mobility(cm^2/Vs) = 7.619708E+1
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