ITO on p-type Si form a simple efficient solar cell .
Can Ag film insertion in-between the top and bottom ITO layers on n-type Si be able to form a rectifying contact
Dear Aliyu,
You can deposit ITO on p-Si using spray pyrolysis techniques. The resulting structure will be rectifying and act as solar cells. This structure was investigated intensively for long time ago and you can search for papers describing the process in detail. Also, trials to improve the efficiency of such structure by passivating the interface states are also investigated.
I could not understand your proposed structure that is how its layers a stacked? If you give more description to your structure i can discuss the mater with you.
Do you want to use n-type silicon as substrate?
Best wishes
Please disclose more details about your stack design to better understand your question.
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