Yes you can make heterojunction solar cells with ITO on top of the p-type Si substrate. But you can not expect high efficiency; it should be around 10-12%.

Dear Aliyu,

I don't have experimental experience with this material combination. But we can discuss the possibilities.

High doped ITO n-type in contact with semiconducting Si forms a Schottky barrier (metal-semiconductor). Here, the work functions W of the materials are from interest. I use for discussion the work functions I found in literature.

n-type ITO: Wm = 4,4 - 4,5 eV.

n-type Si: WS = 4,85 eV

p-type Si (100) WS = 4,91 eV

p-type Si(111) WS = 4,60 eV

A rectifying contact follows for n-type semiconductor, if Wm > WS. In our case is Wm < WS. So we expect: For n-type Si the contact is Ohmic.

For p-type semiconductor a rectifying contact is existent, if Wm < WS.

This is the case. So we expect for p-type silicon a rectifying contact.

I hope this discussion helpes.

With Regard

R. Mitdank

good question

Dear all and Rüdiger Mitdank i did similar work on ITO/p c-Si but the realized Jsc after performing IV measurements is in microm scale instead of milliamps. please any explanation for that?

Good answer Auwal Abdulkadir

You can only get microamps current with ITO/p-Si solar cell until the ITO is not heavily doped though you can not expect comparable current with the conventional p/n junction solar cells.

Thanks Gourab Das , However some research papers reports currents mA/cm2 realized from ITO/p-Si solar cells though very small in magnitude but in mA ranges. Iam still abit confused HHHHHHHHHHHH

Thank you for concern about my question

Please refer those papers...And the other vital parameters are wafer surface cleaning and wafer quality.

Thanks Gourabs