I am working on resistive switching based memory devices. In my devices, I get off current in the range of 1E-5-1E-4 which is very high. It deteriorates the Ion/Ioff and the hence the device performance. For a memory device, the Ion/Ioff ratio is very important factor. Please suggest me how can I reduce the off current. I research papers I have seen off currents of upto 1E-9.
Dear Ishan,
I thin the high leakage current comes from two main effects:
- Since the thicness of the insulator of these capacitors is small. it will be subjected to technological variations during the insulator layer deposition and shaping. Appreciable changes in the thicness can be obtained during the fabrication. The thinner part of the insulator will break much earlier than the thicker part of the layer.
- Also sharp edges of the metal electrode can lead to surface leakage current or spiking off the electric field near the edges causing also some form of early breakdown.
For the proof of this concepts please see the paper in the link:http://doc.utwente.nl/76310/1/groenland.pdf
wish you success
Ishan ,Acording to my perception..... by using stack insulators you can increase leakage resistance and will get required current e.g. metal -insulator 1-insultaor 2 - metal
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