Usually Ti metal target is used in oxygen atmosphere for thin oxide film formation during sputtering. What is the precise condition to be met while doing sputtering so that only anatase will be formed during coating on a quartz substrate?
Formation of anatase on a quartz substrate, you can get by laser ablation. See attached file.
Best regards
Dear Kshetramohan,
In our Nanolab we use reactive magnetron sputtering of a Ti target. Initially the layer is amorphous, but after annealing it crystallise to anatase or rutile. Stoichiometric layers form anatase structure, therefore the oxygen concentration during the sputtering is crucial. I can not provide you with detailed parameters, since our system is home-made.
In our lab we deposit polycrystalline anatase titania without post deposition treatments. We use RF-magnetron sputtering at Ar pressure of 8x10^-3 mbar, 150 W RF power, 350°C substrate temperature, obtaining a deposition rate of about 8 nm/min. We keep the substrates at 6.0 cm from the target, with the sample holder swinging in order to improve the film homogeneity. The crystallite size is of the order of few hundreds nanometers.
http://dx.doi.org/10.1016/j.matlet.2014.10.120
Hello,
First you need to adjust your deposition temperature so you don't obtain rutile phase mixed to the anatase phase at temperatures higher than 500°C. I also advice you not to work on temperatures lower than 300°C because the deposited film will be amorphous.
Second, if you need to deposit 100 nm TiO2 (which is considered a really thin layer), I advice you not to work with RF since at such frequencies, you will obtain much thicker layers (as I know from the experiments e perform in our group).
Good luck
We usually get lower deposition rates in case of RF magnetron sputtering, compared to DC magnetron sputtering. And even with DC sputtering (reactive sputtering from a metallic titanium target) at 500 W we do not get more than a few nm per minute. So for me 100 nm is quite thick.
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