Thank you, Dr El-Denglawey for your usual and urgent response to my questions here. Your answers will enable me come up with high quality write-up.
I’m carrying out a research on electrical characterization of Fluorine-doped tin oxide thin films (FTO). The calculated “Mean Free Path” for the FTO films is in the range 5.43– 9.45 nm, which is considerably shorter than the grain size of (80 nm to 250 nm) obtained. This means that the “grain boundary scattering” is not the dominant mechanism in reducing the mobility of the free carriers in these films. It is reported in the literature that there are other scattering mechanisms such as impurity scattering, surface scattering and lattice scattering that may affect the electrical conductivity. I wish to study scattering mechanisms in FTO films at length. My question is, how do I establish the precise scattering mechanism responsible for reducing the mobility of the free carriers in these films?