Suppose the defects in a semiconductor are changing their position with time. How can I study their effect on the opto-electronic properties of the semiconductor and eventually, on the device? Is there any software to simulate it? Any experimental method to study them?
Please be more precise in your question:
1. what defects do you refer to : 0D (point defects), 1D (dislocations), 2D (straight domain, twin or anti-phase boundaries) or 3D (general grain boundaries or inclusions)?
2. Is your semiconductor single or poly-crystalline?
3. What time scale you are considering?
Thomas Walther
Thanks.
1. I am looking all mentioned defects except 2D. I may be considering 2D defects later.
2. Semiconductor is polycrystalline. In one case it is an inorganic and in other case, it is an organic semiconductor.
3. For initial studies, I am looking for micro second time scale.
Looking forward to your valuable suggestions!
Regards,
Sandeep
Hi, this is difficult. I would probably try fast signal acquisition in scanning electron microscopy (SEM) together with appropriate detectors for spectroscopy, in particular CL and EBIC so you can study the effects on the opto-electronic properties.
Thomas Walther
thanks for your suggestions!
Do you have any idea about device simulator(s) to simulate these effects?
Regards,
Sandeep Kumar
No, sorry; I doubt there will be one that can be used for all these types of defects. There may be an MC based one for point defects and clusters thereof; and there may be a phenomenological based one for grain boundaries
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