For a III-V MOSFET, I declared four regions. They are oxide, channel, buffer and substrate. I want to solve self-consistent schrodinger-poisson (SP) only in the channel (or in the channel & in the buffer) region. For the complete potential profile, I want to solve non-linear poisson in the substrate region rather than SP, so that computational burden gets reduced. How can I setup in Atlas2D or in Atlas 3D?

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