I've build a crystal and extracted it's parameters. Now, I want to use it to build a quantum dot and put it into a SiO2 bulk. Then, I want ti extract it's electronic and photonic patameters. I want to do these all but I don't know how I should do them :D.
Thanks
The most important property of quantum dots, which are formed as a 2D network, is the existence of the wetting layer over which materials transfer among the QDs could be possible by the surface drift diffusion during the pattern formation.
In the case of 3D network this requirement would be satisfied by the long range bulk diffusion in the surrounding embedding bulk media similar to the QW network formation. Actually here 2D diffusion takes place in the plane normal to the wire bundle with the acception of the edges. Hence as a first approximation you can use ATK software by taking very small value for the ratio of the wire length to the wire diameter to mimic the elongated Qd.
Actually I don't believe that any one even attempted to formulate this problem for 3D systems, where wetting potential doesn't play any role since the over all process involves homogeneous nucleation and growth type (no substate over which QD may nucleates).
You should see our formulation of simulation of Qd over the rigid substrate, which may help you to give you an idea about the irreversible thermodynamic formulation of the problem, where interfacial energy related capillary forces play major role in the kinetics.
Dear Tarik,
QW is very specific software. No one can answer your questions better than its creators. Fortunately, the website of the program has a working forum, where friendly staff quickly responds to requests. Please, visit https://quantumwise.com/forum/index.php or ask directly Anders Blom. When I had unusual tasks, I did exactly that.
Best regards, Alexander
Thanks Dear Alexander for your remarks. Fortunately I have always used my own home made programs in our simulation studies no mater what how the mathematical structure of the physical model is complicated. That gives us the great flexibility in introducing required modifications while adapting it to the various physicochemical and geometric configurations landascepts associated with the specific applications of the problem.
Best Regards, Tarık
Dear Tarik,
sorry for misprint, my answer was addressed to the author of the question, i.e. to Afshin.
Best regards, Alexander
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