I have some graphene transistors available. I also have a prove station. I would like to know what measurements I can do to see the cones.
Thanks,
Luis
If you have a single-layer graphene transistor, you should be able to observe the cones (converging at the Dirac point) by measuring a channel resistivity (or conductivity) as a function of the gate voltage. The maximal resistance will correspond to the Dirac point, while the deviations from it will correspond to the cones. For more info, check Fig.1 from the attached paper.
Dear Sergei Sergeenkov,
Thank you for your fast and clear explanation. I have another question though. This could sound a little bit stupid, but I would like to know why in this paper the author calculate both channel- resistivity and -conductivity? One of them is not enough? I mean, to get the conductivity the following relationship "1/resistivity" is used, which implies that the curve will be inverted, but I do not see any additional information in doing that.
Kind regards,
Luis
Figure 1 from that paper is an experimental plot (not a theoretical curve). The authors simply point out that there are two ways to study transport in FETs, either by measuring resistivity (R) or by measuring conductivity (sigma). You choose the experimental method which is more suitable for you. Of course, you can always relate them via Ohm's law. There is though one important difference between them. For bulk systems, R is additive, while in nanoscale systems, R is a global quantity, which cannot be decomposed into local resistivities. For more info on the transport in nanotubes and FETs, check the attached tutorial.
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