the doped rare-earth（sensitive ion and luminescence ion）under low concentration in host shows abnormal high luminescence efficiency , i suspect that the rare earth ions distribute within linear arrangement to each other. Can i affirm this phenomenon with any simple measuring ways? Thank you
Yes, or another distribution like planar arrangement , do you have any ideas?
You can use elemental analysis by EDX mapping, which will show you distribution of elements on surface of the sample and if sample is in powder form then you will know elemental distribution throughout the bulk. For arrangement of dopant in particular plane you can use XRD. What is percentage of dopant in your sample? Because in xrd you will require considerable amount of doping to observe noticeble change in intensity of reflection corresponding to plane of the dopant.
2%~5% of dopant in crystal, i'm afraid using EDX mapping is infeasible due to the low resolution ratio, XRD may be a good choice, which should also need complicated operation,
Well , thank you very much.
Dear Gong,
Do the rare earth doping atoms occupy substitutional or interstitial places.
If you dope a material then it has a maximum solid solubility to such dopant. Increasing the doping more than the solid solubility will lead to the formation of aggregations of the dopants in the host material. If they are aggregated then they may get electronically inactive.
Best wishes
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