I am doing some processing operations on zirconia-based ceramics, which might lead to an increase in oxygen vacancy concentration. I want to quantify the change in oxygen vacancy concentration with my processing parameters.
There are several high end spectroscopy methods to quantify the concentration of oxygen vacancies including Raman, XPS, EPR, Rutherford back scattering, Mott-Schottky impedance spectroscopy etc. In addition, you can measure the density of your specimen accurately and back calculate the stoichiometry (ZrO2-x) assuming that the lattice parameters do not change with oxygen vacancy or use XRD to determine the lattice parameters. Oxygen vacancy concentration from density measurement is very rudimentary.