While reading about interface defect density in MASnI3 based solar cell can not understand if any solar cell structure is a p-i-n type or a p-n type. I can not find a suitable answer. the problem is that an undoped or lightly uniformly doped MASnI3 could be an intrinsic layer and an absorber layer at the same time so it can be a p-i-n type solar cell. But a doped MASnI3 can not be an intrinsic layer so it will be a p-n type solar cell. This is my finding. Mathematical expression of p-i-n and p-n type solar cells interface defect is different. In a software based project how can i find what type of doping has been done. Can i just consider any (p-i-n or p-n ) type while doing research and work accordingly.
Experimental it has been observed it js very difficult to dope perovskite semiconductor meaning sufficient doping can not be achieved to p or n type make hence essentially it stays as I type semiconductor.
You can read this article and also discussion on this for further understanding.
https://www.nature.com/articles/s41560-018-0324-8
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