Dear Aleksandr,

there are , to my knowledge, two experimental methods to do that. The standard method is DLTS method, but my method of choise would Electrical Impedance Spectroscopy (EIS). Once the localised level of interest (I guess that what you want is capture cross section of en electron to be captured by this deep localised level) can be identified in the real part of the measured complex Capacitance, all of the deep level characteristics can be deduced. These are the position of the deep level, the density of the deep level, and the four capture/emission cross sections.

The matter is rather simple in crystalline Silicon, but in principle the same procedure can be used for the case of hydrogenated amorphous silicon. 

please consult the following : US Patent n. 5 627 479 (May 6th, 1997).

If you would like me to help more, I would need to know more about your system, preparation, assumed simplified energy band structure and som other characteristics.

Wi th best regards

Petr

Thanks Petr and Nicolas for answer. I will study this.

I want to create a regression model of how the parameters of a-Si:H/uc-Si:H/pm-Si:H depend on technology, and to create a database. In future this database will be used for modeling.

Hello

Take my greetings

how can find the

Carrier Capture Cross Section for hole and Electrons (sigp and sign)

Degeneracy factor of the Trap centre (degen)

for given values

trap e.level = 0.6 donor density = 5e13

trap e.level = 0.23 acceptor density = 6e12