According to your purpose, an oxidation process using O2 is a good approach to get uniform SiO2. I suggest using 1000 oC and with a pump for better uniform. It is noted that O2 diffusion will be slow down when the thickness of SiO2 increases and therefore, the oxidation rate is decreased over time. I suggest using ellipsometry to confirm the thickness.
By the way, I'm curious why don't you buy SiO2/Si instead of making by yourself, if you want to analyze graphene. According to a previous report (ACS Nano 2013, 7, 11, 10344–10353), you need at least 90 nm to get a good characterization (other good thickness of SiO2 is 300 nm).
It depends on how thick of layer you are looking for. Exposure to ambient environment will form roughly a nm of oxide layer.
But, if you're looking to use it for solar cells, you will probably want to either grow it or purchase it. It may be worth reaching out to a company and explain you are a graduate student looking for SiO2/Si wafers. They may be willing to provide a sample or cut a discount. It doesn't hurt to try.
For growing it, there are a variety of methods and needing a dry procedure along with your specific equipment requirements will narrow them down quite a bit.
It seems you got SiO2. There is a few point defect I guess because of contamination, if you already clean substrate before oxidation then it might come from your CVD. In addition, I saw the difference at the edge, and I suppose you already use a pump so it might come from a temperature gradient.