Please tell me why there is no any Memory Window in this FeFET simu-code? Is something wrong in my code or something I did not written? And why I change the Vgate but the Memory Window and polarization no and changed ? This is my code:

go DevEdit

region reg=1 mat=Silicon color=0xffcc00 pattern=0x9 \

polygon="0.0,0.0 1.0,0.0 1.0,1.0 0.0,1.0"

region reg=2 mat=HfO2 name=Insulator color=0xff pattern=0x2 \

polygon="0.2,0.0 0.8,0.0 0.8,-0.001 0.2,-0.001"

region reg=3 mat=oxide name=In2Se3 color=0x808080 pattern=0x2 \

polygon="0.2,-0.001 0.8,-0.001 0.8,-0.051 0.2,-0.051"

region reg=4 mat=Al2O3 name=Dielectric color=0xff pattern=0x2 \

polygon="0.2,-0.051 0.8,-0.051 0.8,-0.052 0.2,-0.052"

region reg=5 mat=Polysilicon name=gate elec.id=1 work.func=4.05 color=0xffff00 pattern=0x5 \

line="0.25,-0.052 0.75,-0.052"

region reg=6 mat=Polysilicon name=substrate elec.id=2 color=0xffff00 pattern=0x5 \

line="0.0,1.0 1.0,1.0"

region reg=7 mat=gold name=source elec.id=3 color=0xffc8c8 pattern=0x7 \

polygon="0.0,0.0 0.2,0.0 0.2,-0.052 0.0,-0.052"

region reg=8 mat=gold name=drain elec.id=4 work.func=0 color=0xffc8c8 pattern=0x7 \

polygon="0.8,0.0 1.0,0.0 1.0,-0.052 0.8,-0.052"

base.mesh height=0.2 width=0.1

bound.cond max.slope=28 max.ratio=300 rnd.unit=0.001 line.straightening=1 align.points when=automatic

constr.mesh max.angle=90 max.ratio=300 max.height=1 max.width=1 min.height=0.01 min.width=0.01

constr.mesh x1=0.0 x2=1.0 y1=0.0 y2=0.3 max.height=0.025 max.width=0.015

constr.mesh x1=0.25 x2=0.75 y1=-0.055 y2=-0.045 max.height=0.02 max.width=0.01

constr.mesh x1=0.25 x2=0.75 y1=-0.01 y2=0.0 max.height=0.02 max.width=0.01

mesh

structure outf=In2Se3-FeFET_test.str

#tonyplot In2Se3-FeFET_test.str

#quit

go atlas simflags="-P 8"

doping region=1 uniform conc=3e16 p.type

#doping x.min=0.0 x.max=1.0 y.min=0.6 y.max=1.0 gauss conc=5e15 p.type char=0.075

doping x.right=0.2 gaussian conc=1e19 n.type char=0.075

doping x.left=0.8 gaussian conc=1e19 n.type char=0.075

save outf=In2Se3-FeFET_test.str

#materials region=3 permittivity=17 affinity=4.5 eg300=1.39

#tonyplot In2Se3-FeFET_test.str

models cvt srh fldmob fermi fnord print

models region=3 ferro

materials region=3 ferro.ps=0.92e-6 ferro.pr=0.5e-6 ferro.ec=2.0e5 ferro.eps=17.0

contact name=gate n.poly workf=4.17

material mun=800

interface x.min=0.2 x.max=0.8 y.min=-0.051 y.max=-0.051 qf=3e10

interface x.min=0.2 x.max=0.8 y.min=-0.001 y.max=-0.001 qf=3e10

interface x.min=0.2 x.max=0.8 y.min=0.0 y.max=0.0 qf=3e10

method gummel newton itlim=4 trap carriers=2

probe x=0.5 y=-0.011 dir=90 polarization

probe x=0.5 y=-0.011 dir=90 field

output flowlines con.band val.band band.param e.mobility h.mobility

log outf=In2Se3-FeFET_test.log master

solve init

solve vgate=-5 vdrain=0.1

solve prev name=gate vgate=-5 vfinal=5 vstep=0.2

extract name="Vth_forward" (xintercept(maxslope(curve(abs(v."gate"),abs(i."drain")))) \

- abs(ave(v."drain"))/2.0)

save outfile=In2Se3-FeFET_1.str

materials region=3 ferro.ec=-2.0e5

solve name=gate vfinal=-5 vstep=-0.2

save outfile=In2Se3-FeFET_2.str

#extract threshold voltage

extract name="Vth_reverse" (xintercept(maxslope(curve(abs(v."gate"),abs(i."drain")))) \

- abs(ave(v."drain"))/2.0)

#extract Memory Window

extract name="MemoryWindow" (abs($Vth_forward)-abs($Vth_reverse))

#extract name="R" curve(v."gate",i."drain")

log off

quit

Thank you for all, god bless you.