System :
Si/or Ge:substrate (200microns)
HfO2: Deposited by ALD (10-15nm)
Top metal electrode, TiN: In-situ ALD deposited (15nm)
Therefore, final system is: TiN(15nm)/ HfO2(15nm)/Si(200microns) and TiN (15nm)/HfO2(15nm)/Ge(200microns).
I would like to furnace anneal my system (TiN/HfO2/Si and TiN/HfO2/Ge) at around 500C (Nitrogen ambient, Atmospheric pressure) and then etch the TiN.
Problem: When I try to furnace anneal the system, Top TiN capping electrode gets oxidized. Therefore, I am unable to etch TiN (I use H202 AT 65 C to etch TiN).
Solution: I am thinking of using a 50nm sputtered deposited Gold as a capping layer over TiN to protect it from oxidation. I can then etch Gold with (TFA Gold etchant, KI:I2:H20) and TiN with (H202 at 65C).
Do you think this solution would work?
Would gold be able to protect TiN from getting oxidized?
How about sputtered gold bonding with TiN?
Also, Is there an alternative way of doing this whole process?
Nope, I am first of all not sure if graphene can be even grown on TiN or transferred successfully with good adhesion plus I cannot go above 500C.
Hi, one thought, can you anneal under vacuum? I have used tungsten wire heater elements in a stainless steel heater block with a removable substrate carrier and achieved nearly 600C.
Best regards,
Martin
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