Gold oxidation resistance and adhesion?

System : Si/or Ge:substrate (200microns) HfO2: Deposited by ALD (10-15nm) Top metal electrode, TiN: In-situ ALD deposited (15nm) Therefore, final system is: TiN(15nm)/ HfO2(15nm)/Si(200microns)...

12 December 2017 9,881 2 View