Dear colleagues,
The current-voltage measurements (I-V) are performed on Zn(1-x)CaxO/p-Si for different x . I extract the different parameters of the p-n junction, such as the threshold voltage, the IF / IR rectification ratio, the diode ideality factor (n), the saturation reverse current, the potential barrier Fb, and the series resistance (Rs) using the standard I-V method, Nords and Cheung method’s.
I obtain practically the same potential barrier Fb by these 3 methods but the diode ideality factor (n) and the series resistance (Rs) calculated by these methods are different. It's normal? If yes, what has caused this great difference.
Thanks for all in advance.
Have a nice day
Dear Afif Fouzri ,
welcome,
As widegap n window structural parameters varies the interface sates ay the heterojunction varies and lead to the variation of the diode characteristics including the ideality factor. W studied a similar heterojunction structure and investigated the diode parameters. Please refer to the two parameters coming out of this study. You will find them useful and directly answer your question: Article M. Abdelnaby, A. Zekry, F. Elakkad and H. F. Ragaie, “ Depen...
and the paper: Article Capacitance and conductance of ZnxCd1-xS/ZnTe heterojunctions
Best wishes
Best wishes
Dear Afif Fouzri ,
welcome,
As widegap n window structural parameters varies the interface sates ay the heterojunction varies and lead to the variation of the diode characteristics including the ideality factor. W studied a similar heterojunction structure and investigated the diode parameters. Please refer to the two parameters coming out of this study. You will find them useful and directly answer your question: Article M. Abdelnaby, A. Zekry, F. Elakkad and H. F. Ragaie, “ Depen...
and the paper: Article Capacitance and conductance of ZnxCd1-xS/ZnTe heterojunctions
Best wishes
Best wishes
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