Hello,

I am currently working with gate all around nanowire transistors and I have a question regarding the eletric field in the structure.

I've developed 4 different structures, made out of germanium, silicion, polysilicion and graphene(adaptation using polysilicon doped with arsenic) and now I am trying to analyze their eletric fields but I have some big concerns:

- When I compare the eletric field of silicion and polysilicon I can't see any significant differeces, does it make any sense ? 

- The eletric field in the germanium and graphene are lower than in the other devices, but their current are a way bigger. Am I doing sth wrong ? 

- What effects should I expect in the eletric field when I change the material ? I am looking a lot of papers on the internet and I can't still figure it out.

For those who are wondering what kind of structure I'm talking about, I put a picture of the sctructures that I've created.(1.PNG)

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