I wish to grow MoS2 on 300 nm Sio2/Si for example by MBE. But I could not find the literature related to growth by this technique. I know there are other methods like CVD, MOCVD but I understand that MBE has more precise control over the growth. I wonder if there are any technical issues to grow this material in high purity environment. If someone has tried this technique, please give me feedback on the growth conditions.
Hi Talha Thanks but I am specifically looking for growth on SiO2 or sapphire.
Dear Manisha,
I am no growth specialist. But I know that MBE is an epitaxial method. That means, you grow on a substrate which fits the lattice parameter to your film. In your case you must fit a hexagonal film to a trigonal substrate. The lattice parameter (I refer only to the a-parameter) differs from 0,4985 nm (SiO2) to 0,3192 nm (MoS2). A 5:3 ratio would give 1,596 nm to 1,495 nm. If you find an adequat lattice reconstruction it could work. But I believe, you only produce high strain. This gives only crystal defects and no perfect layer. Perhaps you can cut your substrate that the structure fits your film. But this question I would discuss with a crystallograph.
With Regard
R. Mitdank
Thanks a lot Dr. Rudiger for your answer and suggestion. Probably, I will have to change the substrate if it doesnot work on SiO2. But, I really like to know the issue of growth of MoS2 on Sio2 in UHV if someone knows.
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