As you know, melting point of Ga is low and also GaN target is really expensive. That's why I am looking for a method based on using Ga as a target to deposit GaN.
For sputtering you need GaN target prepared by sintering from GaN powder (the commercial one has large content of oxygen).
If preparation of GaN target is expensive for you try to develop a plasma source to make atomic N from N2 (which is not reactive at your conditions). Try to use ozone as well.