Dear Nur,

I think that the most important point is to grow pure oxide for the gate since the interface states between the this oxide and silicon or the organic channel can affect the gate controlability on the channel region of the FET transistor. Once pure oxide ie formed one has to keep its surface clean when depositing the organic material. I would like that you at first develop the gate structure then when it is satisfactory you can move to the source and drain regions.

Best wishes

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