In our previous researсh works, we observed the following unusual Ti implant migration in nanostructured h-BN based ceramics after "hot" MEVVA like Ion Implantation. Total IBA analysis of the above mentioned structure was performed. ERDA, RBS, 4He+ and 1H+ resonant elastic BS were applied for H, high-Z, 16O and low-Z element depth profiling, respectively. SEM WDX technique reveiled a correlation between C and N depth distribution in the buried layers of h-BN based nanocomposite metal-oxide interface. New precision 12C(p,p)12C resonant elastic cross-sections and computer simulation using DVBS code allowed us to conclude that C3N4 buried thin film structure was formed as a result of  Ti MEVVA Implantation and simultaneous Transient Atom Transport process. Is it possible that a number of the research works in this field will be anormous in the literature again?