Dear colleagues! Do you know that our SIRD has been used for many years for detecting near edge defects in Si wafers icluding microcracks?

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Matthias Demant

Hi Martin,

thank you for the information.

Can you give us some more details about this measurement technique?

e.g. measurement approach, acquisition time, resolution, detection accuracy in mc-Si and Cz-Si wafers.

Best regards,

Matthias

Martin Herms

Hi Matthias, please tell me your Email adress. Then I can send you some copies of papers and presentations. We are just preparing a paper in Energy about results on Cz-Si wafers. The main author is Sindy Würzner at the Fraunhofer THM in Freiberg. Studies on multi-Si Wafers as well as on slurry-sawed ones would be very interesting for comparison. In brief: max. lateral resolution ca. 3µm, acquisition time 1mm^2 / min.

Wkr, Martin ([email protected])

P. S. Sorry for confusion! The Information I have just sent to you are the data / parameter of our photo-elastic microscope SIREX that we have applied to the characterization of the sub-surface damage. For the recognition of edge defects on wafers we use the fast wafer mapper SIRD (Scanning Infrared Depolarization Imager). The resolution is about >=100µm, the acquisition rate 1cm^2 / sec !!! M.