As Subash told, yes it is possible to synthesis graphene by PECVD. Depends on geometry of chmaber, gas composition and varying other parameter, one can get vertical graphene as well as planar graphene. For reference, you can go through the following articles
- Bo et al. Plasma-enhanced chemical vapor deposition synthesis of vertically oriented graphene. Nanoscale 2012; 5: 5180-5204
- Rapid synthesis of few layer graphene. Kumar et al . Carbon 50 (2012) 1546-1553
- Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition. Kim et al. 98, 263106 (2011)
Dear Mr. Wang,
silicon is reacts usually with carbon in range of about 650°C and built stable SiC.
So PECVD should support al least dimer generation in plasma to get something on Si The mentioned source shows nice graphene generation in range of some nanometers (Fig.16).(http://pubs.rsc.org/en/content/articlehtml/2013/nr/c3nr33449j). Increasing the size of the flakes they get somehow 3D structure of flakes.
Using Cu larger flakes are possible (http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=2225&context=nanopub).
Staying at Si and using MBE (w/o plasma support of dimer, trimer, rings, . .) never we achieved graphene, because it would need about 900°C and the SiC reaction goes first.
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