For ionic semiconductor, GaAs (Eg=1.42 eV, ni ~10^6/cm3) following mass action law np = ni^2, if p = 1, then the maximum value of n is the square of ni which is ~10^12.
I would like to know, due to defects (vacancies or interstetials etc) is there any possibility that one can realize n = 10^15 /cm3 (which is much higher than square of ni, i.e. 10^12) for a non-degenerate case?
Thanks in advance.
dear colleague
no way to take p =1 !!!!
the only solution to reach the n= 1015 is to dope the GaAs by epitaxy adjusting your parameters.
regards
Dear Anouar Jbeli,
Thank you for your response. Could you please elaborate the way how one can end up with n = 1015 in non degenerate case even with external doping? could you please also look into intrinsic doping possibilities considering defects?
Thank you in advance.
Why are you limiting p to 1? Theoretically you can have smaller numbers. What is attainable in practice is of course a different story.
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