I am working with ionic semiconductors, the intrinsic carrier concentration calculated is about 10^5 /cm3 for a band gap of 1.54 eV. From the value of experimentally determined fermi level (The Ec-Ef is about 160 meV for a band gap of 1.56), the calculated carrier density turned out to be 10^15/cm3 !! (extrinsic, may be due to ionic defects). when I tried to mach with np = ni^2, the 'p' turned out to be of the order of 10^(-5) extreemly small!!!, is it a reliable one? A defect density of 10^16/cm3 is reported for this kind of materils in literature. Is the presence of defects can change that much extent of high carrier concentration i.e. ni^2 = 10^10

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