Of course, you can use it. But the problem is : why you want to do that. In my knowledge, the ZnO has already possessed with novel electron transport properties. And if you can well control the defect on the surface, the injection also wouldn't be a problem. So what's the purpose, for you, to dope tin and take the risk of electron recombination?
@ Yu Tung Yin : Are you really telling If I use SnO2 then recombination will occur. Because some where i read. It gives good exciton separation. That is the reason i planned to use SnO2.
Well, I think that I'm misunderstand what you mean about "Tin dioxide doped Zinc oxide". It should be ZnO:Sn (Tin doped into ZnO). Just from the band structure of ZnO:Sn, yes, the exciton separation would be enhanced. But the results for you cell efficiency is increased or decreased, should be further analysis on its recombination resistance. The impedance data could answer the question quickly.