Can we use IR or Raman spectroscopy to gather information about point defects in a thin film deposited or annealed at different temperatures?

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Hugh J Byrne

This will be hugely dependent on what material, what annealing conditions, including atmosphere.

Naval Kishore Mehta

Thank you, Hugh, in our case, it is Mn ferrite thin film as deposited and annealed at various temperature ( 150-750 degree C) in argon partial pressure (0.07 mbar).

Darshan Sharma

IR and Raman are very sensitive techniques, definitely, defect states can be analyzed with these techniques.

Thank you Darshan Sharma

Hassan Alshamsi

It is well known that the intensity ratio of D-band to G-band is characteristic of the extent of disorder present within the material

Ali hussien Amteghy

my dear,i agree with Dr.Hassan Alshamsi