I'm trying to develop a new recipe for IBEE process, based on what I have access to. So, I was wondering if I can just easily use the gas I need (Ar) in the ICP/RIE, and assume it works the same way as in IBEE.
If I can do so, can you also help me calculate parameters such as Ion Fluence and energy based on what I have access in my RIE machine (power, gas flow, pressure)?
Based on the article titled "Modeling and experimental investigations of Fano resonances in free-standing LiNbO3 photonic crystal slabs" by Jun Deng et al. [ http://dx.doi.org/10.1364/OE.21.003243 ], the answer to your question "Can we use ICP/RIE for IBEE processes?" is probably No.
According to the article, Ion beam enhanced etching (IBEE) is an etching process that combines ion implantation and chemical wet etching.
On the other hand, it does mention in the article that ICP-RIE was used as an alternative to IBEE for fabricating crystals on LiNbO3.
The reason why you probably cannot replace ion implantation with ICP-RIE in IBEE is likely because of the difference in ion energies. Ion implantation uses ion energies of about 10 keV to 500 keV [ https://en.wikipedia.org/wiki/Ion_implantation ]. I believe the ion energies for ICP-RIE are similar to those for RIE, which seem to be in the range of about 30 eV to 1 keV [ http://www.oxfordplasma.de/technols/rie.htm ].
Regarding your question about how to calculate the ion fluence and energy for your ICP-RIE system, contact the manufacture of your ICP-RIE system, because maybe they simulated the parameters when they designed the system.
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