The high band-bending in the surface of n-GaN creates a "notch" for holes generated in a PL experiment that does not exist in the "bulk" underneath. This opens new ways to emit photons other than the band to band recombination that takes place in the bulk for example. Do we really need to "dope" the GaN bulk with trapping centres to explain a yellow emission in PL that can come from the GaN surface?

Article Surface-Assisted Luminescence: the PL Yellow Band and the EL...

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