Pure SnO2 NPs are prepared by a method given in:
[Journal of Nanoparticle Research 12(7):2597-2603].
Pure , highly crystalline rutile-type SnO2 is a wide band gap (3.6 eV) semiconductor and its band edge absorption occurs at 345 nm with blue shifts in the NPs due to reduced size effect.
Zeta potential of pure SnO2 is 2.6 mV which is close to its isoelectric point. This indicates that UNDOPED SnO2 sol is UNSTABLE.
Its NPs show strong absorption in UV range but HAVE EXTREMELY WEAK ABSORPTION I VISIBLE REGION RANGE .
Also, these NPs remain in solid form during the laser irradiation.
So THE EFFICIENCY OF SnO2 NPS FOR PHOTO ENERGY CONVERSION NEEDS TO BE IMPROVED.
It can be attained by changing the concentration of Sn doping from 3 to 30 mol %.
The shortest SPR wavelength of 1618 nm in 10% Sn-doped ITO NPs reflect the highest electron carrier density in the ITO NPs.
The controllable SPR frequencies of ITO offer a novel approach for noble-metal-free SPR applications because unlike noble-metal nano structures, ITO has no inter- and intra -band transitions in the vis−near-IR region and represents a free-electron conduction, allowing us to systematically study the origin of optical effects arising from the SPRs of conduction electrons.
Yet an additional advantage of ITO lies in the fact that its shortest SPR wavelength at 1618 nm photon excitation efficiency of dye (IR26) can be increased by appxo. 200 times by the enhanced electric field induced by [NIR(near infrared (NIR) photons )-SPR] of ITO NPs.
The superiority of[ ITO] over [TO] can well be authenticated from the following two references .In fact the above answer gave a “resume” of these two references for your kind perusal:
[A]Journal of Nanoparticle Research 12(7):2597-2603].
[B] J Am Chem Soc. 2009 Dec 16;131(49):17736-7].
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