I prepared IZO thin film on Sio2/si substrate and conducted IV characterization but the result of the output curve is difficult for me to undertsnd since it starts from larger current and also it seems the current decrease with increasing gate voltage at saturation region.Thank you.
Dear Tue, Thank you so much...the leakage current is in nA and i am using 100nm thick SiO2 as dielectric layer. One additional information is the threshold voltage is very large around 15 V.Thank you again.
Hello Abebe, can you please post a grafic of both, the transfer and output curve including the leakage currents? When using the agilent software, be shure to expand the current range for the leakage current, too. Otherwise not much can be seen.
By the way: The shown curve is the output curve, because you plot the drain current over the drain voltage. For the transfer curve, there should be the gate voltage on the x-axis.
Dieter Spiehl , Thank you very much.Attched is the transfer curve.I am using B1500A and mostly i am taking as a leakage current the value of gate volatge sweep at 0 drain voltage and for this curve it is in nA (to be specific it is around 400 nA). Cn you also explain what do you mean by 'When using the agilent software, be shure to expand the current range for the leakage current'. Thank you.
The tranfer curve doesn't look good. There is no saturation and the section between -5 und +5 V V_Gate looks chaotic.
But the orange curve shows the square root of I_Drain and not the leakage current. So a transfer and output curve including leakage current are still missing here.
IZO is sensitive to UV light, but then you should see a hysteresis. I asume you measured for- and backwards (from V_Gate -10 to +30V and back again)?
In which atmosphere do you temper and measure the IZO?
As far as I know IZO should be heated in air and not e.g. in Ar or N2.
Dieter Spiehl thank you for your fast response.Everything is conducted in normal atmosphere condition.Yes i did the hysteresis measurement as you said.The output curve is attached in my question and attched it below again also. The output curve starts at higher value in Micro Amp. range at 0 drain voltage and also the current is start to decrease at the saturation region.
I still need the leakage currents in the plots. That should look something like this. There you can see the leakage current I_gate in orange and green, respectively.
Dieter Spiehl and Tue Phan thanks again.here is the transfer curve including the leakage current (Orange color).Thank in adavance.
Dear Abebe,
Thanks for sharing the data. As you may know, the measured drain current (by the software) equals to a total of the areal source-to-drain current and the gate-to-source current (gate leakage). Obviously, at a large gate voltage, the gate leakage current is comparable with the drain current (~10 microA). In this case, you may observe a decrease of the measured drain current.
Dear Tue Phan thank you so much.Do you think the offset in drain current at 0 drain volatge is also related to leakage and as Dieter specified also the transfer curve lack saturation zone.Thank you.
Hello Abebe.
The leakage current is way to high to measure and discuss a reasonable semiconductor performance. Do you apply the semiconductor via spin or dip coating? It looks like. If, then try to etch the semiconductor at the edges so it does not give a short circuit from drain/source to the gate.
Hi Abebe,
You should check the value of the offset in drain curent. If it is comparable to the leakage current (at a same applied gate voltage and source/drain voltage), I think, it might be correlated to the leakage.
In addition, from the output characteristic I can see a good saturation characteristic. So, the lack of saturation zone in the transfer curve is due to range of applied source-to-drain voltage. You may try at a Vds>Vgs. Hope it helps!
Dear Dieter Spiehl and Tue Phan thank you so much.I will try to apply your comments and see the result.Thank you again.
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