As We know Shockley et al (1961) derived a radiative efficiency limit for open-circuit voltage, short circuit current, and efficiency of solar cell and found this value to stand at ~30% at 1.1 eV bandgap. But there are other losses present inside a material at fundamental level such as SRH recombination, Auger recombination, and free-electron excitation. Can somebody help me with references where efficiency limit due to these individual process is studied?
Any help regarding this will be highly appreciated.
The effect of Auger recombination on the open circuit voltage of the solar cells is studied in the paper at the link: Article Is Auger recombination the ultimate performance limiter in c...
It is found that the Auger recombination sets an upper limit to the open circuit voltage and the short circuit current under very concentrated sun light where high injection prevails above 1000 suns.
As for the SRH recombination it depends on the density of the recombination centers and their capture cross sections. It almost sets the limit of the PCE for all practical solar cells. It is so that these recombination centers will be generated during high temperature processing of the solar cells during the fabrication.
With low temperature processing the auger limit can be experimentally observed under high excitation or heavily doped solar cells: Article Physically Based Analytical Model of Heavily Doped Silicon W...
Best wishes
The effect of Auger recombination on the open circuit voltage of the solar cells is studied in the paper at the link: Article Is Auger recombination the ultimate performance limiter in c...
It is found that the Auger recombination sets an upper limit to the open circuit voltage and the short circuit current under very concentrated sun light where high injection prevails above 1000 suns.
As for the SRH recombination it depends on the density of the recombination centers and their capture cross sections. It almost sets the limit of the PCE for all practical solar cells. It is so that these recombination centers will be generated during high temperature processing of the solar cells during the fabrication.
With low temperature processing the auger limit can be experimentally observed under high excitation or heavily doped solar cells: Article Physically Based Analytical Model of Heavily Doped Silicon W...
Best wishes
Dear Professor Zekry,
Thank you very much for your valuable suggestions. I will study these articles and reach out back to you.
Thanking you.
I think once you start including non-radiative issues it becomes very material-dependent, but here are two good and highly-cited papers for non-radiative limit in silicon:
https://ieeexplore.ieee.org/abstract/document/6557081
Article Improved quantitative description of Auger recombination in ...
Dear Schnabel,
Thank you very much for these valuable suggestions. I was also looking for articles on similar footings. Yes, I do understand losses due to nonradiative recombination depends on materials and measurement conditions. But I'm sure people must have developed some generalized models which can be applicable to all types of materials for example SRH recombination model.
Article Is Auger recombination the ultimate performance limiter in c...
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