Dear Seniors,
I am wondering, if I could expose my pattern in E-beam resist (Suggest me one for this purpose) which is on top of UV photoresist (AZ some suitable one). Then I used this written pattern as mask to expose the UV photoresist in mask aligner without using any Chromium mask.
in simple words, use e-beam's written pattern as soft mask for UV resist.
Anybody has done or thought of doing something like that?
Any help would be appreciated
Best
Waqas
Thanks Alrik, I am trying to etch Vias about 1.4um deep in Si3N4 and my CD is 2um. I have 4 lithography steps to perform and we want to avoid e-beam for every step being slow and expensive and thin photoresist (which becomes important when patterning metal films thicke than PR itself.
I can be happy with mask aligner but I need to think about alignment marks. Aligning them would be "Fun" in itself so I thought If I could use ebeam's PR as soft mask for my actual PR....So my stack for the very first Litho is like this:
Si3N4>>>Aluminium(1 to 1.5um)>>UV-PR>E-BeamPR.
What you have suggested is(If I get it right):
Si3N4>>Al(film to be patterned)>>UV-PR>>Al 10nm>>EBeamPR
Also I would have to remove this Hard mask Al off. If I do by wet etching.. can UV-PR resist the chemical etchant? which would be H3PO4:H2O:HNO3
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