I am simulating a photodiode with the following structure from top to bottom;

ITO - top electrode

a-Si:H (Amorphous silicon) - gain medium

ITO - conductive layer

n-doped Silicon- bottom substrate

(electrode placed on bottom)

I first used Athena to create the structure, and when I read the file into Atlas, it makes the middle ITO layer an electrode. The middle ITO layer should not be an electrode. I also tried using a floating contact on the middle ITO electrode to try to "eliminate" it. Almost no current leaves through the electrode, but the voltage in this layer is no longer continuous with the other layers touching the middle ITO, so I am not sure if this is a valid way to simulate it.

When I use Atlas to create the structure, I have more control to define the electrodes, but I get convergence issues when I have ITO as the middle layer. When this material is changed to SiO2, I am able to run the simulation.

I have posted the floating contact method to this file.