I'm doing research about metal-semiconductor contact properties.
I already know the CTLM and TLM for measuring specific contact resistance ( ρ c)
But these are for the ohmic contact condition(linear I-V curve).
Do you know any other methods which can let me know specific contact resistance at non-ohmic condition?
(Non-ohmic means Schottky or S-shape I-V curve).
Thanks.
Once IV is non=Ohmic the term contact resistance kind of loses its meaning. However, what I've tended to do as an approximation is to take the gradient dV/dI through V=0. It's easy to apply and tends to give conservative estimates because dV/dI usually decreases at higher voltage.
Furthermore, in most devices you don't want to apply a voltage across the contact itself because that gives a resistive loss V^2/R, so V=0 is the point of interest. But think about the device you want to use the contact in and what current/voltage the contact will see.
Dear Su Kyung Kim,
Actually, Contact resistance is a measure of the ease with which current can flow across a metal- semiconductor interface. In an ohmic interface, the total current density J entering the interface is a function of the difference in the equilibrium Fermi levels on the two sides.
This link will help you for more information about how to find the contact resistance of semiconductor materials.
https://www.google.com/url?sa=t&source=web&rct=j&url=http://ieeexplore.ieee.org/document/1490307&ved=2ahUKEwit-NOm6sLoAhUGxoUKHbDPCyIQFjAFegQIChAB&usg=AOvVaw2o4a7858kIvznVvS45Z9qj
Hope you understand and satisfy with my answer, if any question please feel free to ask me.
I have a complete model related to this contact resistance of semiconductor materials.
Thanks.
I agree with Manuel Schnabel in that you probably need to think what the IV will be at the contact itself, versus the rest of the device. Similarly we use a dV/dI approach near zero volts, as that's what we're interested in for solar cell contacts.
More boradly I would suggest you look into the Cox and Strack method:
https://ui.adsabs.harvard.edu/abs/1967SSEle..10.1213C/abstract
Also some extensions to it have been proposed to account for possible rectifying or diode like behaviour as part of your device, probably as a result of a big mismatch between the work functions at the interface:
https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=8728226
Hope that helps.
If you let the applied voltage = V, and the current at V = I then you can define a parameter R = V/I. However in a real circuit, with non linear elements you will find V = I*R + F(I) where F(I) is a non linear function of I. Therefore , by choosing different forms of F you can make R come out whatever you like. So you must first define your F. When you have done this then you can evaluate R experimentally or using simulation.
For Schottky contacts the only way to measure the contact resistance from the characteristic I-V in the high forward voltage part , the Schottky contact present a resistance.
Hope you all to be healthy,
Dear Su
I treated this problem since long time ago where i measured the I-V characteristics of the Metal Semiconductor contacts. At that time the reviewers of my paper told me our metal semicondcutor contacts for the conventional solar cells. At that time, one had no vision that this topic will become important for the advanced solar cell structures. Any how this method is the three electrode method. Details about this method can be found in the paper at the link: Article A. Zekry and G. El-Dllal, “ effect of MS contact on the elec...
It will help you solving your problem.
Best wishes
Manuel Schnabel Thanks for the reply. I'll calculate dV/dI through V=0.
Zia Hameed Thanks for recommending the paper. I'll check it.
Ruy Sebastian Bonilla I recently research the contact of LEDs devices. I'll refer to Cox and Strack method. Thanks.
Tony Maine Thanks for the reply. Could you recommend the paper regarding getting or setting f(I)?
Djillali Hamri I usually use CTLM method in the range of -1V ~ 1V. I'll expand the range. Thanks.
Abdelhalim abdelnaby Zekry I hope you to be healthy too :) Most of my results are shaped like S so, I'll check your paper. Thanks.
Please read my book
The American University Laboratories For Electrical Engineering Part 1
You can find a way to get I-V curve .
From this curve and the load line we can get the
operating point . For this operating point the resistance
can be found.
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