The effective mass of electrons and holes in a material is an important parameter in understanding its electrical and optical properties. For zirconium dioxide (ZrO2), it is challenging to provide specific values for the effective mass of electrons and holes because ZrO2 is typically considered an insulator with a wide bandgap.
However, if you are using ZrO2 as the gate dielectric material in a tunnel field-effect transistor (TFET), the effective mass values you may be looking for are those of the semiconductor material (such as Si or III-V semiconductors) used for the channel rather than the gate oxide material itself.
For example, in a silicon-based TFET, the effective mass values are:
- Electrons: m_e* ≈ 0.19 m_0 (where m_0 is the free electron mass)
- Holes: m_h* ≈ 0.49 m_0
If you are using a different semiconductor material for the channel, you will need to look up the respective effective mass values for that material. Keep in mind that these values can also be dependent on the crystallographic direction in the material, so it's essential to consider the specific configuration you are working with when determining the effective mass values.
- Badges
- Science topic
- Similar topics
- Correction