I did TEM of thin film of Si on a glass substrate. The SAED pattern of the same has kikuchi lines. The study was done in simple diffraction mode without tilting sample. Please help me study d-spacing, crystal structure, grain size and strain analysis from the same.
Thin foils are often difficult to prepare from the bulk. It is in many cases questionable whether a thin foil truly represents the structure of the interior of the material. The grains relax on both surfaces when the matrix is removed. Due to different grain orientations in a polycrystal the foil contains local residual stress. Therefore surfaces of freestanding foils are often not really flat but show a grain-specific surface relief and bulging. This foil bending and puckering cannot be easily excluded. The result is a change in local orientations of up to several degrees with respect to the microscope-specific reference directions.
In my case, I prepared the sample in a different way. I did not took out the thin film from the substrate nor I grown it of foils. So what you said is not there.
The standard techniques of orientation determination grain by grain using a TEM are the interpretation of selected area electron spot and microbeam Kikuchi diffraction patterns. Please read the following paper, THE DETERMINATION OF LOCAL TEXTURE
BY ELECTRON DIFFRACTION--A TUTORIAL
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