Can anybody suggest methods to characterize a probe station built for DC I-V measurements for additional resistances to be factored in when correcting the measured I-V curves?
Probe stations are typically characterized using known loads. If you use a short, an open, and a known resistance, you should have a pretty good idea if its OK. If you had access to a known-good diode or a transistor you could compare curves.
For high frequency probe stations, they usually offer standards. I would check with the manufacturer for suggestions. Do you have the manual? There are places that sell devices as die, although handling can be problematic if you don't have a lab to handle such things. An example vendor is http://www.semidice.com/.
If the chuck is a big piece of metal, then the issue would probably be your backside wafer contact. If you don't do anything special, then you may get a schottky on the back which would be bad. We used Indium on GaAs for homemade ohmic contacts.
I am actually building it DIY and hence no manuals. I don't have the budget for even a portable station and hence the DIY.
The chuck is made of tinned copper plate. I was worried about the wafer back contact too and that is what I would like to characterize. Were the In on GaAs contacts on the chuck or on the wafer?
This would have been in the 1980s. I probably just pressed some In wire on the surface, but we probably did thermal evaporation as well. We also did InAu but that makes a hard alloy which is difficult to wirebond to.