Is anybody working on a atomistic Tool Kit?
I want to know how to make interface of two different layers. Is it enough to just join the two layers? What are the other parameters to be taken care of?
I work with layered TiX2, X = S, Se, Te.
https://www.researchgate.net/publication/256858187_Characterization_of_1T-TiSe2_surface_by_means_of_STM_and_XPD_experiments_and_model_calculations?ev=prf_pub
We find that splitting of single crystal of good quality leads to atomic-smooth surface. So interface of such crystals may be contacted by just joining. But if quality of crystals is not perfect, one can observe steps of growth. So in these areas contact may be poor. All these operating should be doing in high vacuum for prevent adsorbtion of oxigen and another contaminations.
Article Characterization of 1T-TiSe2 surface by means of STM and XPD...
to Zheng Ren
High resolution TEM or HREM did not shows suface of crystal, it shows look-through image. It does not characterise of area of contact of different layers.
to A. N. Titov
Sir, Thank you for your answer. I agree with you because, graphene and MoS2 have similar fabrication process and MoS2 is allotrope of graphene.
But, what will happen in case of Al2O3 over Silicon? How can I construct 3D model of Al2O3 over Silicon ? what will be the difference in model, if Al2O3 is deposited by Atomic Layer Deposition process and Sputtering process.
If you can provide any reference, that will be very helpful.
thank you :)
Dear Shiv Gopal Yadav,
I did not know exact answer to yours question, I can only give some suppositions.
You ask me about materials with low conductivity, nearly dielectrics. So I suppose very strong relaxation of the surface layers. Few years ago I meet situation when ZrO2 splitted along of plane with high concentration of electric charge (layer of Zr4+ then layer of O2- then again Zr4+....) has reconstruct surface for change facet of surface to electrical neitral planes. So I think that Al2O3 will grow in equilibrium habitus inspite of any attempts to give it another form.
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