I am currently studying the properties of Al2O3 films through Atomic Layer Deposition, and I use Aluminum contacts for my MIM Structures. However I noticed that when I put a piece of Si Wafer and a piece of corning glass with a 100 nm Aluminium thick film in the reacton chamber, I can get growth of Al2O3 on the Si Wafer, but not on the Aluminum film. Has anyone ever encountered this problem? At the moment I only found this article that talks about the subject, but they had no problems with the deposition: https://arxiv.org/pdf/1309.4404.pdf
Thank you.
Dear Mariana Cortinhal . See the following useful RG link: Article Atomic layer deposition of Al2O3 films using AlCl3 and Al((O...
Kindly see also the following useful RG link: Article Chemically Stable Atomic-Layer-Deposited Al2O3 Films for Pro...
Also check please the following useful RG link: Article Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio...
The following links are also very useful: https://arxiv.org/pdf/1309.4404
https://www.mdpi.com/2079-4991/10/3/558/pdf
https://hal.archives-ouvertes.fr/hal-01712453/file/Paper_TSF_final.pdf
Article Atomic layer deposition of Al2O3 thin films using dimethylal...
Visit also the following useful RG links: Article Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide o...
Conference Paper Properties of Al2O3 thin films grown by atomic layer deposition
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