Certainly Raman can be be used to infer electrical properties.  By probing different vibrational modes, you can determine structural / bonding information from a material. Ultimately the crystalline structure of a material determines the band gap of that material (including defects and surface effects) which is exactly the information required to determine conductivity / electron mobility.  As well, for many materials UV-vis absorption is often used as a  measurement of material's band-gap.  

The electron and hole mobility will depend in part on the curvature of the electron bands (conduction and valence, respectively). PL should give you the distance between the bands -- the band gap, and indicate whether it's direct or indirect. From that, you could probably estimate the population of the charge carriers. I don't think you can get anything about band curvature or electron mobility from that information though, but I could be wrong. I'd be curious to find out.

Sarah,

In your thinking, what is "mobility rate"?

The way you are using this expression implies the change of mobility per unit time (or another less natural derivative, e.g. in space).

???

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@PavelMardilovich : what about

https://www.researchgate.net/publication/256694754_Contactless_electron_effective_mass_determination_in_GaInNAsGaAs_quantum_wells

(for instance) ?

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my 2 cents : Raman, PL, electron mobility measurements are different ways of probing the dielectric function ( https://en.wikipedia.org/wiki/Permittivity ) but they work in frequency ranges so far apart that they do not allow to draw direct conclusions from one range to another (say from PL to mobility) ; however, these various measurements can be interpreted and modeled through a somewhat restricted set of parameters (effective masses, phonon energies and dispersion, carrier concentrations, a rather large but finite set of parameters, with only some of them having an influence in careful experiments at a given frequency range) : fitting measurements in one range can help obtain values of such parameters which can be used to interpret further measurements in other ranges ... therefore, you do not "approximate" the dielectric function in one range from its measurements in another faraway range : it is more like a cluedo game where you use measurements in one range to fill the values you need to interpret experiments in another range which in turn allow the determination of other parameters useful in other ranges and so on

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Article Contactless electron effective mass determination in GaInNAs...

Mr. Krikor, that is cerrier mobility means how quickly an electron can move through a metal or semiconductor, when pulled by an electric field and conductivity is proportional to it so to get an idea about conductivity from mobility value.

Thanks all for the replies.

Dear Sarah Kh 

Have nice times and good day

Really, Your inquiry is good. The electric properties of any material are dependent upon optical properties of that material. There are correlated relations between the optical and electrical properties. In one of my articles I studied opto-electrical parameters,  the dielectric properties and electronic polarizability of thermally evaporated amorphous Cd50S50-xSex thin films. 

The objective of this work is to study the influence of the addition of more Se on dielectric properties, opto-electrical parameters and electronic polarizability of amorphous chalcogenide Cd50S50-xSex thin films (30 ≤ x ≤ 50 at.%). Thin films of thickness 200 nm were synthesized by vacuum deposition at ≈ 8.2×10-4Pa. Both refractive index and extinction coefficient were used to obtain all the studied parameters. The high frequency dielectric constant, real and imaginary parts of dielectric constant were discussed. Drude theory was applied to investigate opto-electrical parameters, like optical carrier concentration, optical mobility and optical resistivity. Moreover, other parameters were investigated and studied, e.g. Drude parameters, volume and surface energy loss functions, dielectric loss factor, dielectric relaxation time, complex optical conductivity and electronic polarizability as well as optical electronegativity and third-order nonlinear optical susceptibility. Values of electronic polarizability and nonlinear optical susceptibility were found to be decreased while optical electronegativity increased as Se-content was increased. Increment of Se-content in amorphous Cd50S50-xSex thin films has also led to minimize the energy losses when electromagnetic waves propagate through films as well as optical conductivity and the speed of light increased. The other studied properties and parameters of Cd50S50-xSexfilms were found to be strongly dependent upon Se-content.

I hope this study help you.

Good luck